higher work function

Semiconductors have a higher work function than fiS. The metal fiM so that the hole goes from the semiconductor to the metal and forms a cavity layer in the area near the semiconductor's contact. the amount of the result. The band bending is directly related to the density of the charge carrier of the material. The bending of a semiconductor can be directly controlled by the process of estimating the density of the charge carrier, but it cannot be assumed that there are no curves in the typical metal. For example, Therefore, you must overcome the short key barrier fiB that prevents the transport of charges. In the opposite case, if the work function of the metal is higher than the work function of the semiconductor, the contact point is formed by the charge. Career reservoir Regardless of these reservoir charging operators, the interfaces mobile reservoir charge carrier injection barriers must be overcome. This barrier prevents the transport of charges. If voltage is applied, refit (metal) or the interface reservoir (by reading from the charge carrier) is as follows - Dominant Process